BC556B Bipolar Transistor

Characteristics of BC556B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -65 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of BC556B

The BC556B is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC556B transistor can have a current gain of 200 to 450. The gain of the BC556 will be in the range from 110 to 800, for the BC556A it will be in the range from 110 to 220, for the BC556C it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC556B is the BC546B.

SMD Version of BC556B transistor

The BC856 (SOT-23), BC856B (SOT-23), BC856BW (SOT-323) and BC856W (SOT-323) is the SMD version of the BC556B transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BC556B transistor

You can replace the BC556B with the BC256, BC256B, BC448, BC448B, BC450 or BC450B.
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