IRFH5406 MOSFET
Specifications of IRFH5406 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 14.4 mΩ
- Continuous Drain Current: 40 A
- Total Gate Charge: 23 nC
- Power Dissipation: 46 W
- Package: PQFN 5 X 6 B