IRFH5110 MOSFET
Specifications of IRFH5110 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 12.4 mΩ
- Continuous Drain Current: 63 A
- Total Gate Charge: 48 nC
- Power Dissipation: 114 W
- Package: PQFN 5 X 6 B
Pinout of IRFH5110
