IRFH5006 MOSFET
Specifications of IRFH5006 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 4.1 mΩ
- Continuous Drain Current: 100 A
- Total Gate Charge: 67 nC
- Power Dissipation: 250 W
- Package: PQFN 5 X 6 B
Pinout of IRFH5006
