IRFBE20 MOSFET

Specifications of IRFBE20 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 800 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 6.5 mΩ
  • Continuous Drain Current: 1.8 A
  • Total Gate Charge: 38 nC
  • Power Dissipation: 54 W
  • Package: TO-220AB

Pinout of IRFBE20

IRFBE20 pinout

Replacement and Equivalent of IRFBE20 Transistor

You can replace the IRFBE20 with the IRFBE30, IRFBF30, IRFBG30