IRFBG30 MOSFET
Specifications of IRFBG30 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 1000 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 5 mΩ
- Continuous Drain Current: 3.1 A
- Total Gate Charge: 80 nC
- Power Dissipation: 125 W
- Package: TO-220AB
Pinout of IRFBG30
