IRFB812 MOSFET
Specifications of IRFB812 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 500 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 999.999 mΩ
- Continuous Drain Current: 3.6 A
- Total Gate Charge: 13.3 nC
- Power Dissipation: 78 W
- Package: TO-220AB
Pinout of IRFB812
Replacement and Equivalent of IRFB812 Transistor
You can replace the IRFB812 with the
IRF830B,
IRF840,
IRF840A,
IRF840LC,
IRFB13N50A,
IRFB17N50L,
IRFB9N60A,
IRFB9N65A,
IRFBC40,
IRFBC40A,
IRFBC40LC,
IRFBE30,
IRFBF30
