IRF6894M MOSFET
Specifications of IRF6894M MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 25 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 1.3 mΩ
- Continuous Drain Current: 160 A
- Total Gate Charge: 26 nC
- Power Dissipation: 54 W
- Package: DIRECTFET MX