IRF6898M MOSFET
Specifications of IRF6898M MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 25 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 1.1 mΩ
- Continuous Drain Current: 213 A
- Total Gate Charge: 35 nC
- Power Dissipation: 78 W
- Package: DIRECTFET MX
Pinout of IRF6898M
