IRF6798M MOSFET

Specifications of IRF6798M MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 25 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 1.3 mΩ
  • Continuous Drain Current: 197 A
  • Total Gate Charge: 50 nC
  • Power Dissipation: 78 W
  • Package: DIRECTFET MX

Pinout of IRF6798M

IRF6798M pinout

Replacement and Equivalent of IRF6798M Transistor

You can replace the IRF6798M with the IRF6717M