IRF6893M MOSFET
Specifications of IRF6893M MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 25 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 1.6 mΩ
- Continuous Drain Current: 168 A
- Total Gate Charge: 25 nC
- Power Dissipation: 69 W
- Package: DIRECTFET MX