IRF6629 MOSFET

Specifications of IRF6629 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 25 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 2.1 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 34 nC
  • Power Dissipation: 100 W
  • Package: DIRECTFET MX

Pinout of IRF6629

IRF6629 pinout

Replacement and Equivalent of IRF6629 Transistor

You can replace the IRF6629 with the IRF6729M, IRF6794M, IRF8302M