IRF6608 MOSFET

Specifications of IRF6608 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 30 V
  • Gate-to-Source Voltage, max: ±12 V
  • Drain-Source On-State Resistance, max: 9 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 15 nC
  • Power Dissipation: 42 W
  • Package: DIRECTFET ST

Pinout of IRF6608

IRF6608 pinout

Replacement and Equivalent of IRF6608 Transistor

You can replace the IRF6608 with the IRF6614, IRF6617, IRF6626, IRF6722S