IRF6617 MOSFET

Specifications of IRF6617 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 30 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 8.1 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 11 nC
  • Power Dissipation: 42 W
  • Package: DIRECTFET ST

Pinout of IRF6617

IRF6617 pinout

Replacement and Equivalent of IRF6617 Transistor

You can replace the IRF6617 with the IRF6626, IRF6722S