IRF6614 MOSFET
Specifications of IRF6614 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 40 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 8.3 mΩ
- Continuous Drain Current: 0 A
- Total Gate Charge: 19 nC
- Power Dissipation: 42 W
- Package: DIRECTFET ST
Pinout of IRF6614
