IRF630NS MOSFET

Specifications of IRF630NS MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 300 mΩ
  • Continuous Drain Current: 9.5 A
  • Total Gate Charge: 23.3 nC
  • Power Dissipation: 82 W
  • Package: D2-PAK

Pinout of IRF630NS

IRF630NS pinout

Replacement and Equivalent of IRF630NS Transistor

You can replace the IRF630NS with the IRF640NS, IRFS23N20D, IRFS31N20D, IRFS38N20D, IRFS4127, IRFS4227, IRFS4229, IRFS4620, IRFS5620