IRFS4127 MOSFET
Specifications of IRFS4127 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 22 mΩ
- Continuous Drain Current: 72 A
- Total Gate Charge: 100 nC
- Power Dissipation: 375 W
- Package: D2-PAK
Pinout of IRFS4127
