IRF640NS MOSFET

Specifications of IRF640NS MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 150 mΩ
  • Continuous Drain Current: 18 A
  • Total Gate Charge: 44.7 nC
  • Power Dissipation: 150 W
  • Package: D2-PAK

Pinout of IRF640NS

IRF640NS pinout

Replacement and Equivalent of IRF640NS Transistor

You can replace the IRF640NS with the IRFS23N20D, IRFS31N20D, IRFS38N20D, IRFS4127, IRFS4227, IRFS4229