IRF530N MOSFET
Specifications of IRF530N MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 90 mΩ
- Continuous Drain Current: 17 A
- Total Gate Charge: 24.7 nC
- Power Dissipation: 79 W
- Package: TO-220AB
Pinout of IRF530N
Replacement and Equivalent of IRF530N Transistor
You can replace the IRF530N with the
IRF1310N,
IRF3315,
IRF3415,
IRF3710,
IRF3710Z,
IRF3710ZG,
IRF540,
IRF540N,
IRF540PBF,
IRF540Z,
IRF640,
IRF640PBF,
IRF8010,
IRFB260N,
IRFB31N20D,
IRFB38N20D,
IRFB4110,
IRFB4110G,
IRFB4115,
IRFB4115G,
IRFB4127,
IRFB41N15D,
IRFB4227,
IRFB4229,
IRFB4233,
IRFB42N20D,
IRFB4310,
IRFB4310G,
IRFB4310Z,
IRFB4310ZG,
IRFB4321,
IRFB4321G,
IRFB4332,
IRFB4410,
IRFB4410Z,
IRFB4410ZG,
IRFB4510,
IRFB4510G,
IRFB4610,
IRFB4615,
IRFB4620,
IRFB4710,
IRFB52N15D,
IRFB5615,
IRFB5620,
IRFB59N10D,
IRFB61N15D