IRF510 MOSFET

Specifications of IRF510 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 0.54
  • Continuous Drain Current: 5.6 A
  • Total Gate Charge: 8.3 nC
  • Power Dissipation: 43 W
  • Package: TO-220AB

Pinout of IRF510

IRF510 pinout

Replacement and Equivalent of IRF510 Transistor

You can replace the IRF510 with the IRF510PBF, IRF520, IRF520PBF, IRF530, IRF530PBF, IRF540, IRF540PBF, IRF630, IRF630PBF, IRF634, IRF640, IRF640PBF, IRF644, IRFB13N50A, IRFB17N50L