IRF510 MOSFET
Specifications of IRF510 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 0.54 mΩ
- Continuous Drain Current: 5.6 A
- Total Gate Charge: 8.3 nC
- Power Dissipation: 43 W
- Package: TO-220AB
Pinout of IRF510
Replacement and Equivalent of IRF510 Transistor
You can replace the IRF510 with the
IRF510PBF,
IRF520,
IRF520PBF,
IRF530,
IRF530PBF,
IRF540,
IRF540PBF,
IRF630,
IRF630PBF,
IRF634,
IRF640,
IRF640PBF,
IRF644,
IRFB13N50A,
IRFB17N50L
