IRF530 MOSFET

Specifications of IRF530 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 0.16 mΩ
  • Continuous Drain Current: 14 A
  • Total Gate Charge: 26 nC
  • Power Dissipation: 88 W
  • Package: TO-220AB

Pinout of IRF530

IRF530 pinout

Replacement and Equivalent of IRF530 Transistor

You can replace the IRF530 with the IRF530PBF, IRF540, IRF540PBF