IRF530 MOSFET
Specifications of IRF530 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 0.16 mΩ
- Continuous Drain Current: 14 A
- Total Gate Charge: 26 nC
- Power Dissipation: 88 W
- Package: TO-220AB