IRF1010ES MOSFET
Specifications of IRF1010ES MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 12 mΩ
- Continuous Drain Current: 83 A
- Total Gate Charge: 86.6 nC
- Power Dissipation: 170 W
- Package: D2-PAK
Pinout of IRF1010ES
Replacement and Equivalent of IRF1010ES Transistor
You can replace the IRF1010ES with the
IRF1407S,
IRF2807ZS,
IRF2907ZS,
IRF3610S,
IRF3808S,
IRFS3006,
IRFS3107,
IRFS3206,
IRFS3207,
IRFS3207Z,
IRFS3306,
IRFS3307,
IRFS3307Z,
IRFS3507,
IRFS4010,
IRFS4310,
IRFS4310Z,
IRFS4410,
IRFS4410Z
