IRF3808S MOSFET
Specifications of IRF3808S MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 75 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 7 mΩ
- Continuous Drain Current: 105 A
- Total Gate Charge: 150 nC
- Power Dissipation: 200 W
- Package: D2-PAK
Pinout of IRF3808S
![IRF3808S pinout](/images/mosfet/irf3808s-pinout.jpg)