IRF3610S MOSFET

Specifications of IRF3610S MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 11.6 mΩ
  • Continuous Drain Current: 103 A
  • Total Gate Charge: 100 nC
  • Power Dissipation: 333 W
  • Package: D2-PAK

Pinout of IRF3610S

IRF3610S pinout

Replacement and Equivalent of IRF3610S Transistor

You can replace the IRF3610S with the IRFS4010