IRF3610S MOSFET
Specifications of IRF3610S MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 11.6 mΩ
- Continuous Drain Current: 103 A
- Total Gate Charge: 100 nC
- Power Dissipation: 333 W
- Package: D2-PAK
Pinout of IRF3610S
![IRF3610S pinout](/images/mosfet/irf3610s-pinout.jpg)