STB1277-O Bipolar Transistor

Characteristics of STB1277-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 170 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of STB1277-O

The STB1277-O is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The STB1277-O transistor can have a current gain of 100 to 200. The gain of the STB1277 will be in the range from 100 to 320, for the STB1277-Y it will be in the range from 160 to 320.

SMD Version of STB1277-O transistor

The 2SA1203 (SOT-89), 2SA1203-O (SOT-89), FMMT549 (SOT-23), KTA1663 (SOT-89) and KTA1663O (SOT-89) is the SMD version of the STB1277-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for STB1277-O transistor

You can replace the STB1277-O with the 2SA1020, 2SA1273, 2SA1273-O, 2SA928A, 2SA928A-O, 2SB1229, 2SB1229-R, 2SB892, 2SB892-R, 2SB985, 2SB985R, KSA928A, KSA928A-O, KTA1273, KTA1273O, KTA1281, KTA1282 or KTA1282O.
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