S9012G Bipolar Transistor

Characteristics of S9012G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 112 to 166
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of S9012G

The S9012G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The S9012G transistor can have a current gain of 112 to 166. The gain of the S9012 will be in the range from 64 to 300, for the S9012D it will be in the range from 64 to 91, for the S9012E it will be in the range from 78 to 112, for the S9012F it will be in the range from 96 to 135, for the S9012H it will be in the range from 144 to 202, for the S9012I it will be in the range from 190 to 300.

Complementary NPN transistor

The complementary NPN transistor to the S9012G is the S9013G.

Replacement and Equivalent for S9012G transistor

You can replace the S9012G with the 2N4403, 2SB564A, KN2907, KSB564A, KTC8550, KTC8550C, KTC9012, KTN2907, M8550, MPS2907, MPS2907G, MPS3702, MPS6534, MPS6535, MPS6562, MPS6651, MPS6651G, MPS6652, MPS6652G, MPS750, MPS750G, MPS8550, MPSW51, MPSW51A, MPSW51AG, MPSW51G, PN200, PN2905, PN2907, S8550, SS8550, ZTX549, ZTX550 or ZTX949.
If you find an error please send an email to mail@el-component.com