PN200 Bipolar Transistor

Characteristics of PN200 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -75 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 100 to 450
  • Transition Frequency, min: 250 MHz
  • Noise Figure, max: 5 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of PN200

The PN200 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the PN200 is the PN100.

SMD Version of PN200 transistor

The MMBT200 (SOT-23) is the SMD version of the PN200 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for PN200 transistor

You can replace the PN200 with the KSP55, KSP56, MPS4354, MPS751, MPS751G, MPSA55, MPSA55G, MPSA56, MPSA56G, MPSW55, MPSW55G, MPSW56, MPSW56G or PN4354.
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