S9012E Bipolar Transistor

Characteristics of S9012E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 78 to 112
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of S9012E

The S9012E is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The S9012E transistor can have a current gain of 78 to 112. The gain of the S9012 will be in the range from 64 to 300, for the S9012D it will be in the range from 64 to 91, for the S9012F it will be in the range from 96 to 135, for the S9012G it will be in the range from 112 to 166, for the S9012H it will be in the range from 144 to 202, for the S9012I it will be in the range from 190 to 300.

Complementary NPN transistor

The complementary NPN transistor to the S9012E is the S9013E.

Replacement and Equivalent for S9012E transistor

You can replace the S9012E with the 2N4402, 2SB564A, 2SB564AO, KSB564A, KSB564AO, KTC9012, KTC9012E, MPS3702, MPS6533, MPS6535, MPS6562, MPS6651, MPS6651G, MPS6652, MPS6652G, MPS750, MPS750G, MPSW51, MPSW51A, MPSW51AG, MPSW51G, PN2904 or PN2906.
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