NTE129P Bipolar Transistor

Characteristics of NTE129P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.85 W
  • DC Current Gain (hfe): 100 to 300
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-237

Pinout of NTE129P

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the NTE129P is the NTE128P.

SMD Version of NTE129P transistor

The 2SA1368 (SOT-89), 2SB805 (SOT-89) and 2SD1006 (SOT-89) is the SMD version of the NTE129P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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