NTE129P Bipolar Transistor
Characteristics of NTE129P Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 0.85 W
- DC Current Gain (hfe): 100 to 300
- Transition Frequency, min: 25 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-237
Pinout of NTE129P
Complementary NPN transistor
SMD Version of NTE129P transistor
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