NTE128P Bipolar Transistor

Characteristics of NTE128P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.85 W
  • DC Current Gain (hfe): 100 to 300
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-237

Pinout of NTE128P

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the NTE128P is the NTE129P.

SMD Version of NTE128P transistor

The 2SC3438 (SOT-89) is the SMD version of the NTE128P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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