2SD1006 Bipolar Transistor

Characteristics of 2SD1006 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 2 W
  • DC Current Gain (hfe): 90 to 400
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SD1006

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1006 transistor can have a current gain of 90 to 400. The gain of the 2SD1006-HK will be in the range from 200 to 400, for the 2SD1006-HL it will be in the range from 135 to 270, for the 2SD1006-HM it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1006 might only be marked "D1006".

Complementary NPN transistor

The complementary NPN transistor to the 2SD1006 is the 2SB805.

Replacement and Equivalent for 2SD1006 transistor

You can replace the 2SD1006 with the 2SB805, 2SB806 or 2SD1007.
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