MPS8550S-D Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -25 V
• Collector-Base Voltage, max: -40 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -1.5 A
• Collector Dissipation: 0.35 W
• DC Current Gain (h_fe): 160 to 300
• Transition Frequency, min: 200 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: SOT-23
• Electrically Similar to the Popular MPS8550D transistor

Here is an image showing the pin diagram of this transistor.The MPS8550S-D transistor can have a current gain of 160 to 300. The gain of the MPS8550S will be in the range from 85 to 300, for the MPS8550S-B it will be in the range from 85 to 160, for the MPS8550S-C it will be in the range from 120 to 200.The MPS8550S-D transistor is marked as "BJD".The complementary NPN transistor to the MPS8550S-D is the MPS8050S-D.The MPS8550D is the TO-92 version of the MPS8550S-D.