MJE13006 Bipolar Transistor

Characteristics of MJE13006 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 300 V
  • Collector-Base Voltage, max: 600 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 8 to 60
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of MJE13006

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE13006 transistor

You can replace the MJE13006 with the FJP13007, KSE13006, KSE13007, KSE13007F, MJE13007, MJE13007A, MJE13007G or STD13007F.
If you find an error please send an email to mail@el-component.com