KSE13006 Bipolar Transistor

Characteristics of KSE13006 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 300 V
  • Collector-Base Voltage, max: 600 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 8 to 60
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular MJE13006 transistor

Pinout of KSE13006

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSE13006 transistor can have a current gain of 8 to 60. The gain of the KSE13006H1 will be in the range from 15 to 28, for the KSE13006H2 it will be in the range from 26 to 39.

Replacement and Equivalent for KSE13006 transistor

You can replace the KSE13006 with the FJP13007, KSE13007, KSE13007F, MJE13006, MJE13007, MJE13007A, MJE13007G or STD13007F.
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