MJE1101 Bipolar Transistor

Characteristics of MJE1101 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-127

Pinout of MJE1101

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE1101 is the MJE1091.

Replacement and Equivalent for MJE1101 transistor

You can replace the MJE1101 with the MJE1100, MJE1102 or MJE1103.
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