MJE1102 Bipolar Transistor

Characteristics of MJE1102 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-127

Pinout of MJE1102

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE1102 is the MJE1092.

Replacement and Equivalent for MJE1102 transistor

You can replace the MJE1102 with the MJE1103.
If you find an error please send an email to mail@el-component.com