MJE1100 Bipolar Transistor

Characteristics of MJE1100 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-127

Pinout of MJE1100

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE1100 is the MJE1090.

Replacement and Equivalent for MJE1100 transistor

You can replace the MJE1100 with the MJE1101, MJE1102 or MJE1103.
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