MJD47T4G Bipolar Transistor

Characteristics of MJD47T4G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 350 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 30 to 150
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular TIP47 transistor
  • The MJD47T4G is the lead-free version of the MJD47T4 transistor

Pinout of MJD47T4G

Here is an image showing the pin diagram of this transistor.

Marking

The MJD47T4G transistor is marked as "J47G".

Replacement and Equivalent for MJD47T4G transistor

You can replace the MJD47T4G with the MJD47, MJD47G, MJD47T4, MJD50, MJD50G, MJD50T4 or MJD50T4G.
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