MJD50G Bipolar Transistor
Characteristics of MJD50G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 400 V
- Collector-Base Voltage, max: 500 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 15 W
- DC Current Gain (hfe): 30 to 150
- Transition Frequency, min: 10 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-252
- Electrically Similar to the Popular TIP50 transistor
- The MJD50G is the lead-free version of the MJD50 transistor
Pinout of MJD50G
Marking
Replacement and Equivalent for MJD50G transistor
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