MJD50T4G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 400 V
• Collector-Base Voltage, max: 500 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 1 A
• Collector Dissipation: 15 W
• DC Current Gain (h_fe): 30 to 150
• Transition Frequency, min: 10 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-252
• Electrically Similar to the Popular TIP50 transistor
• The MJD50T4G is the lead-free version of the MJD50T4 transistor

Here is an image showing the pin diagram of this transistor.The MJD50T4G transistor is marked as "J50G".You can replace the MJD50T4G with the MJD50, MJD50G or MJD50T4.