MJD2955T4G Bipolar Transistor

Characteristics of MJD2955T4G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -70 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular MJE2955T transistor
  • The MJD2955T4G is the lead-free version of the MJD2955T4 transistor

Pinout of MJD2955T4G

Here is an image showing the pin diagram of this transistor.

Marking

The MJD2955T4G transistor is marked as "J2955G".

Replacement and Equivalent for MJD2955T4G transistor

You can replace the MJD2955T4G with the MJD2955, MJD2955G or MJD2955T4.
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