MJD122-1 Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 100 V
• Collector-Base Voltage, max: 100 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 8 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 1000 to 12000
• Transition Frequency, min: 4 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-251
• Electrically Similar to the Popular TIP122 transistor

Here is an image showing the pin diagram of this transistor.The MJD122-1 transistor is marked as "J122".The complementary PNP transistor to the MJD122-1 is the MJD127-1.You can replace the MJD122-1 with the MJD122-1G.The MJD122-1G transistor is the lead-free version of the MJD122-1.