MG6331 Bipolar Transistor

Characteristics of MG6331 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 230 V
  • Collector-Base Voltage, max: 230 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 18 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 60 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of MG6331

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MG6331 is the MG9411.

Replacement and Equivalent for MG6331 transistor

You can replace the MG6331 with the 2SD1313, MAG6333, MAG6333B or MG6331-R.
If you find an error please send an email to mail@el-component.com