KTA1283O Bipolar Transistor

Characteristics of KTA1283O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 85 to 160
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of KTA1283O

The KTA1283O is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTA1283O transistor can have a current gain of 85 to 160. The gain of the KTA1283 will be in the range from 85 to 300, for the KTA1283GR it will be in the range from 160 to 300, for the KTA1283Y it will be in the range from 120 to 200.

Complementary NPN transistor

The complementary NPN transistor to the KTA1283O is the KTC3211O.

SMD Version of KTA1283O transistor

The MMBT3702 (SOT-23), MPS8550S (SOT-23) and MPS8550S-B (SOT-23) is the SMD version of the KTA1283O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KTA1283O transistor

You can replace the KTA1283O with the 2SA1020 or KTA1281.
If you find an error please send an email to mail@el-component.com