KTA1283 Bipolar Transistor

Characteristics of KTA1283 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 85 to 300
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of KTA1283

The KTA1283 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTA1283 transistor can have a current gain of 85 to 300. The gain of the KTA1283GR will be in the range from 160 to 300, for the KTA1283O it will be in the range from 85 to 160, for the KTA1283Y it will be in the range from 120 to 200.

Complementary NPN transistor

The complementary NPN transistor to the KTA1283 is the KTC3211.

SMD Version of KTA1283 transistor

The MMBT3702 (SOT-23) and MPS8550S (SOT-23) is the SMD version of the KTA1283 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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