KTC3211 Bipolar Transistor

Characteristics of KTC3211 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 85 to 300
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of KTC3211

The KTC3211 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTC3211 transistor can have a current gain of 85 to 300. The gain of the KTC3211GR will be in the range from 160 to 300, for the KTC3211O it will be in the range from 85 to 160, for the KTC3211Y it will be in the range from 120 to 200.

Complementary PNP transistor

The complementary PNP transistor to the KTC3211 is the KTA1283.

SMD Version of KTC3211 transistor

The MPS8050S (SOT-23) is the SMD version of the KTC3211 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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