KSD882-Y Bipolar Transistor

Characteristics of KSD882-Y Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD882Y transistor

Pinout of KSD882-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD882-Y transistor can have a current gain of 160 to 320. The gain of the KSD882 will be in the range from 60 to 400, for the KSD882-G it will be in the range from 200 to 400, for the KSD882-O it will be in the range from 100 to 200, for the KSD882-R it will be in the range from 60 to 120.

Complementary PNP transistor

The complementary PNP transistor to the KSD882-Y is the KSB772-Y.

Replacement and Equivalent for KSD882-Y transistor

You can replace the KSD882-Y with the 2SC2270, 2SC3420, 2SD1348, 2SD1683, 2SD1722, 2SD1723, 2SD793, 2SD793-P, 2SD794, 2SD794-Y, 2SD794A, 2SD794A-Y, 2SD882, 2SD882P, 2SD882Y, BD131, BD185, BD187, BD189, BDX35, BDX36, KSD794, KSD794-Y, KSD794A, KSD794A-Y, KSH882, KSH882-Y, KTD882, KTD882-Y, MJE222, MJE225 or MJE520.
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