KSD401-G Bipolar Transistor

Characteristics of KSD401-G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular 2SD401-G transistor

Pinout of KSD401-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD401-G transistor can have a current gain of 200 to 400. The gain of the KSD401 will be in the range from 120 to 400, for the KSD401-Y it will be in the range from 120 to 240.

Replacement and Equivalent for KSD401-G transistor

You can replace the KSD401-G with the 2SC4381, 2SC4382, 2SD401, 2SD401-G, 2SD402, 2SD772, 2SD772A, 2SD772B, 2SD792, 2SD792A, 2SD792B, MJE15030, MJE15030G, MJE15032, MJE15032G, MJE5740, MJF15030, MJF15030G, TIP150, TIP41F or TIP42F.
If you find an error please send an email to mail@el-component.com