KSD401 Bipolar Transistor
Characteristics of KSD401 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 150 V
- Collector-Base Voltage, max: 200 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 2 A
- Collector Dissipation: 25 W
- DC Current Gain (hfe): 120 to 400
- Transition Frequency, min: 5 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
- Electrically Similar to the Popular 2SD401 transistor
Pinout of KSD401
Classification of hFE
Complementary PNP transistor
Replacement and Equivalent for KSD401 transistor
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