KSD401 Bipolar Transistor

Characteristics of KSD401 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 120 to 400
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular 2SD401 transistor

Pinout of KSD401

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD401 transistor can have a current gain of 120 to 400. The gain of the KSD401-G will be in the range from 200 to 400, for the KSD401-Y it will be in the range from 120 to 240.

Complementary PNP transistor

The complementary PNP transistor to the KSD401 is the KSB546.

Replacement and Equivalent for KSD401 transistor

You can replace the KSD401 with the 2SC4381, 2SC4382, 2SD401, 2SD402, 2SD772, 2SD772A, 2SD772B, 2SD792, 2SD792A, 2SD792B, MJE15030, MJE15030G, MJE15032, MJE15032G, MJF15030, MJF15030G, TIP41F or TIP42F.
If you find an error please send an email to mail@el-component.com