KSD261 Bipolar Transistor

Characteristics of KSD261 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 120 to 400
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92
  • Electrically Similar to the Popular 2SD261 transistor

Pinout of KSD261

The KSD261 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads. The KSD261C transistor (with suffix "C") is the center collector version of the KSD261.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD261 transistor can have a current gain of 120 to 400. The gain of the KSD261G will be in the range from 200 to 400, for the KSD261Y it will be in the range from 120 to 240.

Complementary PNP transistor

The complementary PNP transistor to the KSD261 is the KSA643.

KSD261 Transistor in TO-92 Package

The 2SD261 is the TO-92 version of the KSD261.

Replacement and Equivalent for KSD261 transistor

You can replace the KSD261 with the 2N5172, 2SD261, 2SD471A, KSD471A, MPS3706, MPS650, MPS650G, MPS6532, MPS6601, MPS6601G, MPS6602, MPS6602G, MPSW01, MPSW01A, MPSW01AG or MPSW01G.
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